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TEST AND MEASUREMENT: FTIR Measures Dielectric Dopant Concentration.(Brief Article)

Microtechnology News

| January 01, 2000 | COPYRIGHT 2000 BCC Research. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan.  All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)Copyright

Nanometrics Inc. (310 DeGuigne Dr., Sunnyvale, CA 94086; Tel: 408/746-1600, Fax: 408/720-0196; Website: nanometrics.com), an industry leader in semiconductor metrology equipment, announced the addition of Fourier transform infrared (FTIR) technology to its NanoSpec 9000 integrated film thickness measurement system. The enhancement enables the system to determine dielectric dopant concentration, which is emerging as a critical parameter in semiconductor processing.

Equipped with FTIR technology, the compact NanoSpec 9000 can be integrated into wafer-processing equipment to measure film thickness, optical constants, and dopant concentrations immediately after deposition. Doped films will no longer have to be transferred to stand-alone systems for monitoring. The NanoSpec 9000 is currently available exclusively on Applied Materials' Mirra Mesa chemical mechanical planarization (CMP) system as a standard feature and Producer's chemical vapor deposition (CVD) system as an optional feature. The NanoSpec 9000 with FTIR technology will be available for shipping in the first quarter of 2000.

"Current FTIR systems are stand-alone and require a very sophisticated operator. Nanometrics' leading edge, enhanced NanoSpec 9000 is integrated directly onto process tools, thus negating the need for operator intervention," says John Heaton, CEO of Nanometrics. ...

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