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Ion Implanter Uses Less Energy.

Microtechnology News

| January 01, 2000 | COPYRIGHT 2000 BCC Research. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan.  All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)Copyright

ULVAC Japan (401 Griffen Park Dr., Methuen, MA; Tel: 978/686-7550, Fax: 978/689- 6300) introduced a new concept Medium-Current Ion Implanter, Model IW-630, for the 300-mm production line, with an economical energy range of 3-900 keV.

To date, most conventional ion implanters have been designed for larger wafers, resulting in larger system dimensions, higher system prices, and increased electrical power requirements. In contrast, ULVAC has designed a new single- wafer-type ion implanter which works on a production line for 300-mm and 200-mm wafers with significantly reduced energy consumption.

In addition, the IW-630 can cover a wide range for ion energy and dosing recipe than other systems. By using multi-charged ion beams, the specific ion beam can be completely separated from the alternately charged ion beams. A new energy filter has solved this problem, enabling the new device to cover a 3-keV to 900- keV energy range without energy contamination.

A common problem with conventional ion implantation processes is the dose shift. When the ion beam implants into the wafer, gasses exit from the surface of the wafer. These gasses cause charge transportation problems, resulting in dose ...

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