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Trench MOSFETs feature 30 V, N-channel design.(ON Semiconductor Expands Power Management Offerings for Computing and Game Console Applications with New High-Density Trench MOSFETs)

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| October 30, 2009 | COPYRIGHT 2004 ThomasNet, Incorporated. (Hide copyright information)Copyright

High-density trench MOSFETs include NTD49x series of 32-79 A devices, in 6.7 x 10.4 mm DPAK packages; NTMFS49x series 35-166 A devices in 5 x 6 mm SO8FL package; NTTFS49x series 34-79 A units in 3.3 x 3.3 mm [micro]8FL package; and NTMS49x series 12.5-17 A devices in 5 x 6 mm SOIC8 package. MOSFETs feature optimized low gate charge and RDS(on) to maximize switching performance and system efficiency. They are also lead- and halogen-free and RoHs compliant.

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New NTD49xx, NTMFS49x, NTTFS49x and NTMS49x series of 30 volt, N-channel devices improve switching performance and overall power efficiency

PHOENIX, Ariz. - Oct. 26, 2009 - ON …

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