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Possessing unified memory, Magnetoresistive Random Access Memory Cell Technology accelerates both read and write operation speeds. It consists of 2T1MTJ cell structure for 200 MHz random access write operation, 5T2MTJ cell structure for 500 MHz random access read operation, and write-line-inserted MTJ to reduce write current down to 1/3.
Tokyo, Japan, July. 14, 2006 -- NEC Corporation today announced that it has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs. The newly developed cell technology includes three key …