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Discrete IGBTs replace 200-300 V MOSFETs.(Low Cost 300V Discrete IGBT Product Line Replaces 200-300V MOSFETS)

Product News Network

| May 10, 2004 | COPYRIGHT 2004 ThomasNet, Incorporated. (Hide copyright information)Copyright

Offered in TO-220, TO-247, D2, and D3 packages, 300 V IGBTs use Power MOS 7[R] Technology and are designed to replace 200-300 V MOSFETs in switching applications to 200 kHz. Also suited for plasma display panel applications, products offer IC2 values of 26, 32, 60, and 83 A depending on model. Additional applications include DC-DC converters for Telecom, DC-AC inverters for alternate energy and SMPS applications, and PDP applications.

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Bend OR..... Advanced Power Technology (NASDAQ: APTI) is pleased to announce it's new product line of 300V IGBTS. These discrete devices use APT's latest generation Power MOS 7[R] Technology and are …

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