Microlithography World articles from November 2002

Microlithography World archives from November 2002

RET options at 70nm. (Feature).
November 1, 2002... The "strong RETs" needed to print 70nm design rules using 193nm exposure will put severe restrictions on chip layouts. Two recently proposed methodologies: double-exposure dipole lithography and the chrome-less phase lithography technique avoid...

Another view on extending ArF to the 65nm node. (Feature).
November 1, 2002... Successful simulated and experimental results for a new phase-shifting design technique called Full Phase indicate that the industry can reliably extend 193nm lithography to the 65nm process node using today's scanners. The 65- and 45nm...

The lithography expert: the impact of phase errors on phase shifting masks. (Feature).
November 1, 2002... Although phase shifting mask (PSM) technology was first introduced 20 years ago (1), the full potential of this technology for resolution enhancement has yet to be realized. While attenuated PSMs have found widespread application, the so-called...

Shows & conferences/SPIE.
November 1, 2002... IEDM '02 December 9-11 * San Francisco, California The IEEE International Electron Devices Meeting (IEDM) will treat topics like "Lithography for Sub-100nm Applications" and "Chip Technologies for Entertainment Robots." For more...

Implant layers: leading-edge noncritical lithography. (Feature).
November 1, 2002... Implant layers pose special challenges for lithographers, including the need for profiles with vertical walls in thick resist layers or optimized for angled implant shadowing, control of reflective notching, and resist scum removal. Negative...

A silly 5nm... and then some. (Editorial).
November 1, 2002... In this issue, we have two articles comparing lithography approaches to the 70nm node, now called "65nm" by the ITRS. Why 65? Supposedly, 65nm represents 1/[root of (2)] shrinks from the 130nm node, but there is more to it than that. The...