Microlithography World articles from August 2007

Microlithography World archives from August 2007

Double patterning lithography for DRAM: double patterning lithography can be used for the two-dimensional (2D) cell and core structures in DRAM below 40nm if the proper decomposition methods are applied and the impact of misalignment is minimized.
August 1, 2007... Double patterning lithography (DPL) is performed using two cycles of lithography and etching processes, and has been mentioned as one of the candidates for sub-40nm patterning. The other candidate, high index immersion lithography, is hindered...

Topcoat-free photoresists for 193nm immersion lithography: fluorinated co-polymer additives can segregate to the surface of conventional 193nm resists and form hydrophobic topcoats in situ. Such materials can work successfully as immersion resists when the layer also limits PAG leaching and is compatible with TMAH development.
August 1, 2007... New materials have played a critical role in helping immersion lithography transition from an academic curiosity to a high throughput, low defectivity lithographic technique for manufacturing semiconductor devices. While protective topcoat...

Line-edge roughness, Part 3.(The Lithography Expert)
August 1, 2007... In the last two editions of this column [1, 2], a stochastic modeling approach to the fundamental mechanisms behind the formation of line-edge roughness (LER) was given. The model begins with photon shot noise, which follows Poisson statistics,...

Laser produced plasma light source for EUVL: EUV radiation sources employing pulsed C[O.sub.2] lasers to excite tin targets promise sufficient conversion efficiency and power for high-volume manufacturing (HVM).
August 1, 2007... Extreme ultraviolet lithography (EUVL) is a potential solution for lithography exposure tools at the 32nm node and below on the International Technology Roadmap for Semiconductors (ITRS) [1]. The 2006 update of the ITRS schedules mass...

Reticle etch system.(NEWS & PRODUCTS)(Applied Materials to launch Centura Tetra III Advanced reticle etch system controls)(Brief article)
August 1, 2007... Applied Materials' Centura Tetra III Advanced reticle etch system controls trench depths across quartz masks to less than 10[Angstrom] and reduces critical dimension loss to less than 10nm, reportedly enabling the use of alternating phase shift...

Post-litho pattern enhancement system.(NEWS & PRODUCTS)
August 1, 2007... Lam Research Corp.'s 2300 Motif postlithography pattern enhancement system is designed for production of next-generation feature sizes using current lithography technology. Employing a proprietary plasma-assisted process, the new system...

Applied Materials releases oxide spacer system.(NEWS & PRODUCTS)
August 1, 2007... At SEMICON West, Applied Materials Inc. released its Applied Producer ACE SACVD system, which helps extend 193nm lithography using self-aligned double patterning (SADP) schemes. The ACE system reportedly delivers a highly conformal oxide spacer...

ASML selects Cymer as EUV source supplier for HVM.(NEWS & PRODUCTS)
August 1, 2007... At SEMICON West 2007, ASML Holding NV (ASML) selected Cymer Inc. as the extreme ultraviolet (EUV) source supplier for ASML's EUV scanners for high-volume manufacturing (HVM). Cymer disclosed that it has signed a multi-year, multi-unit EUV...

Cadence snaps up Invarium, cites pattern synthesis benefits.(NEWS & PRODUCTS)
August 1, 2007... In the latest sign of consolidation in the DFM universe, Cadence Design Systems Inc. acquired Invarium Inc., a developer of lithography modeling and pattern-synthesis technology, in July, creating what the firms say is combined DFM solution...

Mentor acquires Sierra Design.(NEWS & PRODUCTS)(Mentor Graphics to acquire Sierra Design Automation)(Brief article)
August 1, 2007... Mentor Graphics has acquired Sierra Design Automation for $90 million in a half-and-half cash/stock deal, bolstering its design offerings. Mentor says the deal will be "slightly accretive" for FY07 (ending Jan. 31, 2008), and shave about $0.02...

Report: Nikon boosting immersion stepper output.(NEWS & PRODUCTS)(Report)(Brief article)
August 1, 2007... In June, Nikon Corp. said it wants to hike its output of immersion steppers to between 40-60 machines during the next fiscal year, at a potential expense of 4 billion yen (US ~$33 million), but will wait until this fall to finalize its plans to...

IMEC updates 32nm litho progress.(NEWS & PRODUCTS)(Financial report)
August 1, 2007... At SEMICON West, European R&D consortium IMEC is disclosing it results after a year of 32nm half-pitch work, noting progress in all three of its areas of focus: high-index 193nm immersion litho, double-patterning, and EU. "We've made...

LithoWare brings PROLITH to design.(NEWS & PRODUCTS)
August 1, 2007... KLA-Tencor has introduced LithoWare, a new Linux-based product enabling semiconductor circuit designers to run PROLITH on large server farms, accelerating development of resolution-enhancement techniques (RET) and optical proximity correction...

Nikon announces new ArF and KrF scanners, i-line stepper.(NEWS & PRODUCTS)
August 1, 2007... At SEMICON West, Nikon introduced two new lithography DUV scanners: the NSRS310F ArF scanner and the NSR-S210D KrF scanner. Both systems are built on the Tandem Stage platform, which enables significant productivity improvements and enhanced...

Shows & conferences.(Conference news)(Calendar)
August 1, 2007... SEMICON Taiwan 2007 September 12-14--Taipei, Taiwan SEMICON Taiwan highlights the latest in semiconductor manufacturing equipment, materials, and service, with programs addressing manufacturing challenges, the latest technologies, and...

DfM: what's real now?(EDITORIAL)(design for manufacturing)
August 1, 2007... After nearly half a decade, design for manufacturing (DfM) methodology has not yet provided the expected value to erstwhile users, in spite of the perceived need and vaunted advantages. For most DfM start-ups, life is still difficult; few have...